By George C. Chryssis
ISBN-10: 0070109516
ISBN-13: 9780070109513
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Additional info for High Frequency Switching Power Supplies Theory And Design
Example text
A critical factor in the successful operation of the Ward converter b the placement and precise selection of the capacitor C2across the output of the transformer. C2 is given by the equation 3111-3 Features of the Ward Converter The Ward converter was developed to satisfy a certain application need, which conventional topologies could not satisfy. The comerfer was used in a boost configurntion, and the theoretically predicted waveforms presented here were reproduced by actual practical measurements.
Finally the power rating of the resistor is calculated. 90 I, HIGH-FREQUENCY SWFCHING WWER SUPPUES 4-9 THE POWER MOSFET USED AS A SWITCH Although the field-effect transistor (FET) has been used in circuit designs for many years, the power metal-oxide-semiconductor field-effect transistor (klOSFET) has been perfected in recent years tu make it commercially available for power electronics designs. The MOSFET was developed out of the need for a power device that could work beyond the %kHz frequency spectrum, anywhere from 100 kHz to above 1 MHz, without experiencing the limitations of the bipolar power transistor.
Devices manufactured using this technique may be operated at maximum rated power levels and collector voltages with no fear of secondary breakdown. Figure 4-14 shows a schematic of the complete monolithic device. This technique implants a junction field-dect transistor (JFET) in series with the power transistor base. The JFET acts as a base ballast resistor whose resistance changes as a function of collector-to-base voltage. This method differs From the standard emitter ballasting, where the resistor is placed in series with the device emitter.
High Frequency Switching Power Supplies Theory And Design by George C. Chryssis
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