By F. F. Y. Wang
ISBN-10: 0444860959
ISBN-13: 9780444860958
This booklet introduces to non-experts numerous very important methods of impurity doping in silicon and is going directly to talk about the tools of selection of the focus of dopants in silicon. the normal technique used is the dialogue strategy, yet, because it has been sufficiently lined in lots of texts, this paintings describes the double-diffusion approach
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Extra resources for Impurity Doping Processes in Silicon
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F. W. Willoughby, Double-diffusion processes in silicon dislocations (Hill 1976 private communication, Yoshida a n d K a n a m o r i [39], Schwettmann and Kendall [40], N a k a m u r a et al. [31]) a n d this evidence clearly indicates that dislocation-related effects are not a major cause of push-out, nor of the anomalous "tail" in phosphorus profiles also observed in the absence of dislocations. H u a n d Yeh [41] further helped to characterize the emitter-push effect, in particular by developing an analysis of the enhancement.
Willoughby, Double-diffusion processes in silicon Initial base^5m/l075"C 0 -2 -4 (a) 6 0 2 Emitier. 15m/lOOO"C -4 6 Depth in Microns 0 (b) -2 -4 -6 (c) Fig. 34. (ii) (a) Simulated base profile including electric-field and push-out effects. Initial base 5 m / 1 0 7 5 ° C Ga, arsenic emitter 15 m / 1 0 0 0 ° C in 1 / 1 , 0 / N . (b) A s (a) but including Fermi-level effect, (c) Experimental profile. ) It can be seen that the simulation reproduces the main features of the experimental profile accurately, including the position of the dip, the pile-up in the emitter, and the small push-out a n d depletion of d o p a n t in the base.
3. Base retardation When arsenic is used as the emitter in an n - p - n transistor, a p h e n o m e n o n known as base retardation is frequently seen, where the diffused junction away from the emitter advances more rapidly than that directly beneath it - an example given by H u [49] is shown in fig. 27. Such retardation 38 A. F. W. Willoughby, Double-diffusion processes in silicon 1000 900 T ' ° C ) 800 ! Fair (phosphorus Lee (phosphorus ο our results Δ Base x . 9 1000 / Τ (° Κ ) Fig. 26. Temperature dependence of the boron-enhancement factor.
Impurity Doping Processes in Silicon by F. F. Y. Wang
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