By S. Velumani and René Asomoza
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Additional info for Advances in Semiconducting Materials
Tikare. Crack healing behavior of hot-pressed silicon nitride due to oxidation. Scripta Metallurgica et Materialia, 26 (1992) pp. 1263–1268. C. Chu J. Korous, M. Nakatani, K. Ando. Crack healing behavior of silicon carbide ceramics. J. Am. Ceram. Soc. 83, (2000), 2788– 2792. . K. Houjou, K. Ando, S. P. Liu, S. Sato. Crack-healing and oxidation behavior of silicon nitride ceramics. 2329–2338.  K. Ando, K. Furusawa, K. Takahashi, S. Sato. Crack-healing ability of structural ceramics and a new methodology to guarantee the structural integrity using the ability and proof-test.
77, 1950, pp. 489-552. M. al, Izv. Akad. , Vol. 4, 1989, pp. 214-218. D. Whittenberger, in Symposium on Solid State Powder Processing, Eds. H. J. deBarbadillo, Indianapolis, Indiana, October 1-5, 1989, pp. 137-155.  J. J. , New York, 1971, pp. 370-371. 34 Crack disappearance by high-temperature oxidation of alumina toughened by Ni nano-particles Ana L. Salas-Villaseñor 1, 2, a , Jose Lemus-Ruiz 3, b, Makoto Nanko1, Daisuke Maruoka1 1 Department of Mechanical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan.
5 MPa in H13 internally lined with alumina steel cylindrical dies. The dimensions of each die were 5 mm in diameter by 10 mm in height, giving samples of 5 grams. Reactive sintering of the samples was then carried out inside an infrared radiation furnace provided with a quartz tube concentric within the cylindrical hot zone of the heating furnace. This furnace was attached to an Universal Testing Instron Machine, using grips made of a molybdenum TZM alloy to transmit the compressive stress. The sintering reaction of the samples was performed at constant temperatures of 600, 650, and 800 oC, during 60, 90, and 120 minutes respectively, under applied constant stresses of 5, 10, and 20 MPa.
Advances in Semiconducting Materials by S. Velumani and René Asomoza