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723011, 2009. , “Bulk growth of GaAs An overview,” Journal of Crystal Growth 198-199(Part 1), pp. 325-335, 1999. , “Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source,” Journal of Applied Physics 55(8), pp. 3163-3165, 1984. 5 μm,” Applied Physics Letters 45(12), pp. 1272-1274, 1984. , 2007. , The MOCVD Challenge Volume 1: A Survey of GaInAsP-InP for Photonic and Electronic Applications, Adam Hilger, Bristol, UK, 1989. , The MOCVD Challenge Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications, Institute of Physics, Bristol, UK, 1995.

2007] Slow downward flow of precursors (a) Gases pumped outward by substrate rotation High speed rotating substrate holder (b) Silica top plate directs flow horizontally across wafers Close coupled showerhead to inject precursors Low speed rotation to give uniform growth Group-V injector Group-III injector (c) Planetary rotation to give uniform growth (d) Rotation of substrate holder to alternate between Group-V and Group-III precursorsrotation Fig. 11. [Reproduced with permission from Chapter 14 ‘Epitaxial Crystal growth: Methods and Material’ in ‘Springer Handbook of Electronic and Photonic Materials,’ S.

The thickness, composition and doping level of the epilayer can be very precisely controlled via an accurate control of the beam fluxes. The beam flux of the source materials is a function of their vapor pressure, which can be precisely controlled by their temperature. In addition, each source is mechanically shuttered, which allows for rapid modulation/ interruption of the flux at a constant source temperature and sub-monolayer control over layer thickness. Being realized in an ultrahigh vacuum (UHV) environment, MBE can be controlled in situ by a large variety of surface sensitive diagnostic methods 28 Technology of Quantum Devices such as reflection high energy electron diffraction (RHEED), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), secondary ion mass spectroscopy (SIMS) and ellipsometry.

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